p p ju3na80 / pj d 3na80 / pj p 3na80 / pj f 3na80 march 10,2014 - rev.00 page 1 8 00 v n - c hannel mosfet v oltage 8 0 0 v c urrent 3 a ito - 220ab - f to - 220ab to - 252 to - 251ab f eatures ? r ds(on) , v gs @10v,i d @ 1.5 a< 4.8 ? high switching speed ? impr oved dv/dt capability ? low gate charge ? low reverse transfer capacitance ? lead free in compliance wit h eu rohs 2011/65/eu directive . ? green molding compound as per iec61249 std. (halogen free) mechanical data ? case : to - 251ab,to - 252 ,to - 220ab, ito - 220ab - f pa ckage ? terminals : solderable per mil - std - 750, method 2026 ? to - 251ab approx. weight : 0.0104 ounces, 0.297grams ? to - 252 approx. weight : 0.0104 ounces, 0.297grams ? to - 220ab approx. weight : 0.06 7 ounces, 2 grams ? ito - 220ab - f approx. weight : 0.068 ounces, 2 grams maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted) parameter symbol to - 251ab to - 220ab ito - 220ab - f to - 252 units drain - source voltage v ds 800 v gate - source voltage v gs + 30 v continuous drain current i d 3 a puls ed drain current i dm 12 a single pulse avalanche energy (note 1 ) e as 173 mj power dissipation t c =25 o c p d 80 106 39 80 w derate above 25 o c 0.64 0.85 0.31 0.64 w/ o c operating junction and storage temperature range t j ,t stg - 55~150 o c typical therma l resistance - junction to case - j unction to ambient r jc ja 1.56 110 1.2 62.5 3.2 120 1.56 110 o c /w ? limited only by maximum junction temperature
p p ju3na80 / pj d 3na80 / pj p 3na80 / pj f 3na80 march 10,2014 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition mi n. typ. max. units static drain - source breakdown voltage bv dss v gs =0v,i d =250ua 8 00 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2 3.4 4 v drain - source on - state resistance r ds(on) v gs =10v,i d = 1.5 a - 4.2 4.8 d ss v ds = 8 00v,v gs =0v - 0.01 1 .0 ua gate - source leakage current i gss v gs = + 30v,v ds =0v - + 10 + 100 na diode forward voltage v sd i s = 3 a,v gs =0v - 0.87 1.4 v dynamic (note 4 ) total gate charge q g v ds = 640 v, i d = 3 a, v gs =10v (note 2,3 ) - 11 - nc gate - source charge q gs - 3.1 - gate - drain charge q gd - 4.8 - input capacitance ciss v ds =25v, v gs =0v, f=1.0mhz - 40 6 - pf output capacitance coss - 50 - reverse transfer capacitance crss - 1 - turn - on delay time td (on) v dd = 40 0v, i d = 3 a, r g = 25 (note 2,3 ) - 9.8 - ns turn - on rise time t r - 23 - turn - off delay time td (off) - 18 - turn - off fall time t f - 24 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 3 a maximum pulsed drain - source diode forw ard current i sm --- - - 12 a reverse recovery time trr v gs =0v, i s = 3 a di f / dt=100a/us (note 2 ) - 507 - ns reverse recovery charge qrr - 0. 26 - uc notes : 1. l= 30 mh, i as = 3.3 a, v dd = 5 0v, r g = 20 ohm, starting t j =25 o c 2. pulse width < 300us, duty cycle < 2% 3. essentially independent of operating temperature typical characteristics . 4. guaranteed by design, not subject to product ion testing
p p ju3na80 / pj d 3na80 / pj p 3na80 / pj f 3na80 march 10,2014 - rev.00 page 3 t ypical characteristic curves fig.1 output characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. d rain current fig. 4 on - resistsnce vs. junction temperature fig. 5 capacitance vs. drain - source voltage fig. 6 body dlode characterlslcs
p p ju3na80 / pj d 3na80 / pj p 3na80 / pj f 3na80 march 10,2014 - rev.00 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 breakdown voltage var iation vs.temperature fig. 9 threshold voltage variation with temperature fig. 10 maximum safe operating area fig. 11 maximum safe operating area fig. 1 2 maximum safe operating area
p p ju3na80 / pj d 3na80 / pj p 3na80 / pj f 3na80 march 10,2014 - rev.00 page 5 t ypical characteristic curves fig. 13 pju/pjd n ormalized transient thermal impedance vs. pulse width fig. 14 pjp 3na80 normalized transient thermal impedance vs. pulse width fig. 15 pjf 3 na 8 0 normalized transient thermal impedance vs. pulse width
p p ju3na80 / pj d 3na80 / pj p 3na80 / pj f 3na80 march 10,2014 - rev.00 page 6 packaging information . ito - 220ab - f dimension u nit: mm t o - 220ab dimension u nit: mm to - 252 dimension u nit: mm to - 251ab dimension u nit: mm
p p ju3na80 / pj d 3na80 / pj p 3na80 / pj f 3na80 march 10,2014 - rev.00 page 7 p art n o packing code v ersion part n o packing code package type packing type marking ver sion pju3 n a8 0_ t0_00001 to - 2 51ab 80pcs / tube u3 n a8 0 halogen free pjd3 n a8 0 _l2_00001 to - 252 3,000pcs / 13
p p ju3na80 / pj d 3na80 / pj p 3na80 / pj f 3na80 march 10,2014 - rev.00 page 8 disclaime r
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